features n rohs compliant* n low profle n low power loss, high effciency n ul 94v-0 classifcation applications n switch mode power supplies n portable equipment batteries n high frequency rectifcation n dc/dc converters n telecommunications cd214a-b1xr series schottky barrier rectifer chip diode *rohs directive 2015/863, mar 31, 2015 and annex. specifcations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their specifc applications. general information portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. bourns offers schottky rectifer diodes for rectifcation applications, in a compact chip package compatible with do-214ac (sma) size format. the schottky rectifer diodes offer a forward current of 1 a with a choice of repetitive peak reverse voltage of 20 v up to 100 v. absolute maximum ratings (@ t a = 25 c unless otherwise noted) parameter symbol cd214a- unit b120r b120lr b140r b140lr b160r b1100r maximum repetitive peak reverse voltage v rrm 20 20 40 40 60 100 v maximum average forward current i f(av) 1 a maximum peak forward surge current (8.3 ms single half sine-wave) i fsm 30 a operating junction temperature range t opr -55 to +125 -55 to +150 c storage temperature range t stg -55 to +150 c *rohs compliant lead free *rohs compliant versions available lead free versions are rohs compliant* electrical characteristics (@ t a = 25 c unless otherwise noted) parameter symbol condition or model min. typ. max. unit maximum instantaneous forward voltage @1 a (note 1) v f cd214a-b120lr cd214a-b140lr 0.37 0.38 v CD214A-B120R cd214a-b140r 0.47 0.50 cd214a-b160r 0.60 0.70 cd214a-b1100r 0.76 0.85 dc reverse current i r v r = v rrm cd214a-b120lr cd214a-b140lr 0.35 1.0 ma CD214A-B120R cd214a-b140r cd214a-b160r cd214a-b1100r 0.02 0.2 ma typical junction capacitance c j v r = 4 v, f = 1.0 mhz 110 pf typical thermal resistance (note 2) junction to ambient r ja CD214A-B120R cd214a-b140r cd214a-b160r cd214a-b1100r 88 c/w cd214a-b120lr cd214a-b140lr 55 junction to lead r jl CD214A-B120R cd214a-b140r cd214a-b160r cd214a-b1100r 28 cd214a-b120lr cd214a-b140lr 17 notes: (1) pulse width 300 microsecond, 1 % duty cycle. (2) mounted on pcb with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.
3312 - 2 mm smd trimming potentiometer specifcations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their specifc applications. cd214a-b1xr series schottky barrier rectifer chip diode performance graphs forward current derating curve maximum peak forward surge current typical instantaneous forward characteristics typical reverse characteristics typical junction capacitance 1.0 0.5 0 02 55 0 75 100 125 150 average forward rectified current (amps) lead temperature (c) resistive or inductive load pcb mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas 30 5 10 15 20 25 0 01 0 100 peak forward surge current (amps) number of cycles @ 60 hz 8.3 ms single half sine-wave (jedec method) 0.01 0.10 1 10 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 instantaneous forward current (a) instantaneous forward voltage (volts) 0.01 0.1 1 10 100 0.001 02 0 40 60 80 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) t j = 100 c 400 100 10 0.1 1.0 10 100 junction capacitance (pf) reverse voltage (volts) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p CD214A-B120R, -b140r, cd214a-b120lr, -b140lr cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r cd214a-b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r, -b160r, -b1100r t j = 25 c t j = 25 c t j = 100 c cd214a-b1xl series 1.0 0.5 0 02 55 0 75 100 125 150 average forward rectified current (amps) lead temperature (c) resistive or inductive load pcb mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas 30 5 10 15 20 25 0 01 0 100 peak forward surge current (amps) number of cycles @ 60 hz 8.3 ms single half sine-wave (jedec method) 0.01 0.10 1 10 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 instantaneous forward current (a) instantaneous forward voltage (volts) 0.01 0.1 1 10 100 0.001 02 0 40 60 80 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) t j = 100 c 400 100 10 0.1 1.0 10 100 junction capacitance (pf) reverse voltage (volts) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p CD214A-B120R, -b140r, cd214a-b120lr, -b140lr cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r cd214a-b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r, -b160r, -b1100r t j = 25 c t j = 25 c t j = 100 c cd214a-b1xl series 1.0 0.5 0 02 55 0 75 100 125 150 average forward rectified current (amps) lead temperature (c) resistive or inductive load pcb mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas 30 5 10 15 20 25 0 01 0 100 peak forward surge current (amps) number of cycles @ 60 hz 8.3 ms single half sine-wave (jedec method) 0.01 0.10 1 10 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 instantaneous forward current (a) instantaneous forward voltage (volts) 0.01 0.1 1 10 100 0.001 02 0 40 60 80 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) t j = 100 c 400 100 10 0.1 1.0 10 100 junction capacitance (pf) reverse voltage (volts) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p CD214A-B120R, -b140r, cd214a-b120lr, -b140lr cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r, -b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r cd214a-b160r cd214a-b1100r cd214a-b120lr, -b140lr CD214A-B120R, -b140r, -b160r, -b1100r t j = 25 c t j = 25 c t j = 100 c cd214a-b1xl series
f i h b c dia. g a d d e specifcations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their specifc applications. cd214a-b1xr series schottky barrier rectifer chip diode product dimensions recommended pad layout dimensions: mm (inches) dimension cd214a-b1 series a 4.5 0.10 (0.177 0.004) b 2.20 0.10 (0.087 0.004) c (dia.) 0.50 (0.020) d 0.95 0.20 (0.037 0.008) e 0.96 +0.20/-0.10 (0.038 +0.008/-0.004) dimensions: mm (inches) typical part marking dimension cd214a-b1 series f 2.60 (0.102) max. g 1.47 (0.058) min. h 1.27 (0.050) min. i 5.14 (0.202) ref. device code: 102 = CD214A-B120R 102l = cd214a-b120lr 104 = cd214a-b140r 104l = cd214a-b140lr 106 = cd214a-b160r 110 = cd214a-b1100r 102 yww date code: y = last digit of year ww = week number how to order cd 214a - b 1 20 l r common code cd = chip diode package 214a = sma/do-214ac compatible model b = schottky barrier series maximum average forward rectifed current 1 = 1 a maximum repetitive peak reverse voltage 20 = 20 v 40 = 40 v 60 = 60 v 100 = 100 v forward voltage suffx l = low forward voltage environmental specifcations moisture sensitivity level ................................................................ 1 esd classifcation (hbm) ............................................................. 3b 3312 - 2 mm smd trimming potentiometer
3312 - 2 mm smd trimming potentiometer specifcations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their specifc applications. cd214a-b1xr series schottky barrier rectifer chip diode packaging information ....... ....... ....... ....... ....... ....... ....... ....... p a f e t 120 d 2 d d 1 w 1 c index hole p 0 p 1 w b 30 pitches direction of feed 30 pitches end trailer device leader start d the product is dispensed in tape and reel format (see diagram below). dimensions: mm (inches) item symbol cd214a-b1 series carrier width a 2.45 0.10 (0.096 0.004) carrier length b 4.75 0.10 (0.187 0.004) carrier depth c 1.51 0.10 (0.059 0.004) sprocket hole d 1.50 0.10 (0.059 0.004) reel outside diameter d 178 2.0 (7.008 0.079) reel inner diameter d 1 50.0 (1.969) min. feed hole diameter d 2 13.0 0.50 (0.512 0.020) sprocket hole position e 1.75 0.10 (0.069 0.004) punch hole position f 5.50 0.05 (0.217 0.002) punch hole pitch p 4.00 0.10 (0.157 0.004) sprocket hole pitch p 0 4.00 0.10 (0.157 0.004) embossment center p 1 2.00 0.10 (0.079 0.004) overall tape thickness t 0.40 (0.016) max. tape width w 12.00 0.30 (0.472 0.012) reel width w 1 18.7 (0.736) max. quantity per reel -- 3,000 01/18 asia-pacifc: tel: +886-2 2562-4117 email: asiacus@bourns.com europe: tel: +36 88 520 390 email: eurocus@bourns.com the americas: tel: +1-951 781-5500 email: americus@bourns.com www.bourns.com
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